Light emtting device, method for manufacturing light emitting device, and light emitting apparatus

ABSTRACT

A light emitting device according to the embodiment includes a reflecting layer; an adhesion layer including an oxide-based material on the reflecting layer; an ohmic contact layer on the adhesion layer; and a light emitting structure layer on the ohmic contact layer.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a Continuation of U.S. Patent Application No.12/720,385 filed on Mar. 9, 2010 now U.S. Pat. No. 7,956,376, whichclaims priority under 35 U.S.C. §119(a) of Korean Patent Application No.10-2009-0020133 filed on Mar. 10, 2009, which is hereby incorporated byreference in its entirety.

BACKGROUND

Embodiments relate to a light emitting device, a method formanufacturing a light emitting device, and a light emitting apparatus.

A light emitting diode (LED) is a sort of a semiconductor device thatconverts electric energy into light. The LED has advantages of low powerconsumption, semi-permanent lifespan, rapid response speed, safety,environmental-friendliness as compared to existing light sources such asa fluorescent lamp, an incandescent lamp, etc. Many researches inreplacing the existing light sources with the LED have been progressed.The LED is being increasingly used as a light source for an illuminationapparatus of various lamps to be used in or out of a room, a liquidcrystal display device, an electronic display board, a streetlight, andthe like.

SUMMARY

Embodiments provide a light emitting device having a new structure, amethod for manufacturing a light emitting device, and a light emittingapparatus.

Embodiments provide a light emitting device with improved lightextracting efficiency, a method for manufacturing a light emittingdevice, and a light emitting apparatus.

Embodiments provide a light emitting device that can prevent materialsused as a reflecting layer from diffusing to a light emitting structurelayer, a method for manufacturing a light emitting device, and a lightemitting apparatus.

In one embodiment, a light emitting device includes: a reflecting layer;an adhesion layer including an oxide-based materialon the reflectinglayer; an ohmic contact layer on the adhesion layer; and a lightemitting structure layer on the ohmic contact layer.

In another embodiment, a light emitting apparatus includes; a body; afirst electrode and a second electrode on the body; a light emittingdevice electrically connected to the first electrode and the secondelectrode on the body; and a sealing layer surrounding the lightemitting device on the body, wherein the light emitting device includesa reflecting layer; an adhesion layer including an oxide-based materialon the reflecting layer; an ohmic contact layer on the adhesion layer;and a light emitting structure layer on the ohmic contact layer.

In yet another embodiment, a method for manufacturing a light emittingdevice includes: forming a light emitting structure layer; forming anohmic contact layer on the light emitting structure layer; forming anadhesion layer including an oxide-based material on the ohmic contactlayer; and forming a reflecting layer on the adhesion layer.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a diagram for explaining a light emitting device according toan embodiment;

FIGS. 2 to 11 are diagrams for explaining a method for manufacturing alight emitting device according to an embodiment; and

FIG. 12 is a cross-sectional view of a light emitting apparatusincluding a light emitting device according to an embodiment.

DETAILED DESCRIPTION OF THE EMBODIMENTS

In describing embodiments, it will be understood that when each layer(or film), region, pattern, or structure is described to as being formed‘on’ or ‘under’ each layer (or film), region, pattern, or structure,“on” or “under” can be formed “directly” or via other layer(indirectly)”. In addition, word “on,” or “under,” are will be describedbased on the accompanying drawings.

In the drawings, the thickness or size of each layer is exaggerated,omitted, or schematically illustrated for convenience in description andclarity. Also, a size of each component does not entirely reflect anactual size.

Hereinafter, a light emitting diode, a method for manufacturing a lightemitting diode, a light emitting device will be described with referenceto the accompanying drawings.

FIG. 1 is a diagram for explaining a light emitting device according toan embodiment.

Referring to FIG. 1, a light emitting device 100 according to anembodiment includes a conductive supporting substrate 175, a bondinglayer 170 that is formed on the conductive supporting substrate 175, areflecting layer 160 that is formed on the bonding layer 170, anadhesion layer 155 that is formed on the reflecting layer 160, an ohmiccontact layer that is formed on the adhesion layer 155, a protectivelayer 140 that is formed at a peripheral region on an upper surface ofthe adhesion layer 155, a light emitting structure layer 135 that isformed on the ohmic contact layer 150 and the protective layer 140 togenerate light, a passivation layer 180 that protects the light emittingstructure layer 135, a current blocking layer 145 that is formed betweenthe ohmic contact layer 150 and the light emitting structure layer 135,and an electrode 115 that is formed on the light emitting structurelayer 135.

The conductive supporting substrate 175 supports the light emittingstructure layer 135 and can supply power to the light emitting structurelayer 135 along with the electrode 115. The conductive supportingsubstrate 175 may include at leas one of, for example, copper (Cu), gold(Au), nickel (Ni), molybdenum (Mo), copper-tungsten (Cu—W), and carrierwafer (for example, Si, Ge, GaAs, ZnO, Sic, etc.).

A thickness of the conductive supporting substrate 175 can be changedaccording to a design of the light emitting device 100. For example, theconductive supporting substrate 175 may have a thickness of, forexample, 50 μm to 300 μm. The conductive supporting substrate 175 is notnecessarily formed and may be omitted according to the structural changeof the light emitting device 100. For example, the reflecting layer 160is formed thickly, such that the conductive supporting substrate 175 maynot be formed.

The bonding layer 170 may be formed on the conductive supportingsubstrate 175. The bonding layer 170 is formed under the reflectinglayer 160. The bonding layer 170 may be strongly bonded to thereflecting layer 160 and the conductive supporting substrate 175. Thebonding layer 170 includes a barrier metal, a bonding metal, etc. Forexample, the bonding layer 170 may include at least one of Ti, Au, Sn,Ni, Cr, Ga, In, Bi, Cu, Ag, and Ta.

The embodiment shows the case where the conductive supporting substrate175 is coupled to the reflecting layer 160 in a bonding manner. However,the conductive supporting substrate 175 may be formed on the reflectinglayer 160 in a plating manner. In this case, the bonding layer 170 maybe replaced as a seed layer for plating. In other words, after the seedlayer is formed on the reflecting layer 160, the conductive supportingsubstrate 175 may be formed thereon through the plating. The conductivesupporting substrate 175 may be made of a platable metal material. Forexample, the seed layer may include at least one of Au, Cu, Mo, Pt, andW.

The reflecting layer 160 may be formed on the bonding layer 170. Thereflecting layer 160 reflects light input from the light emittingstructure layer 135, thereby making it possible to improve the lightextracting efficiency.

The reflecting layer 160 may be made of metal including at least one ofAg, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Cu, Au, and Hf or an alloythereof. In addition, the reflecting layer 160 may be formed of amulti-layer using the above-mentioned metals or alloy thereof andtransmitting and conductive materials such as IZO (Indium-Zinc-Oxide),IZTO (Indium-Zinc-Tin-Oxide), IAZO (Indium-Aluminum-Zinc-Oxide), IGZO(Indium-Gallium-Zinc-Oxide), IGTO (Indium-Gallium-Tin-Oxide), AZO(Aluminum-Zinc-Oxide), ATO (Antimony-Tin-Oxide) etc. For example, in theembodiment, the reflecting layer 160 may include at least one of Ag, Al,an alloy of Ag—Pd—Cu, and an alloy of Ag—Cu.

The adhesion layer 155 is formed on the reflecting layer 160. Theadhesion layer 155 strengths the adhesion of the reflecting layer 160and the ohmic contact layer 150. The adhesion layer 155 may includes anoxide-based material. In this case, it improves transmittance, therebymaking it possible to reduce light amount absorbed in the adhesion layer155 as well as increase light amount reflected and extracted from thereflecting layer 160. For example, in the embodiment, the adhesion layer155 may be made of AZO or IZO. When the adhesion layer 155 is made ofAZO or IZO, the adhesion layer 155 may be formed thickly, which canprevent a material such as Ag used as the reflecting layer 160 fromdiffusing to the light emitting structure layer 135. For example, acontent of composition of ZO (Zinc-Oxide) in AZO or IZO may be 50% to80%, thereby making it possible to improve transmittance.

The ohmic contact layer 150 is formed on the adhesion layer 155. Theohmic contact layer 150 ohmic-contacts a second conductive typesemiconductor layer 130 of the light emitting structure layer 135 toefficiently supply power to the light emitting structure layer 135 andmay be formed of a single layer or a multi-layer including at least oneof ITO, IZO, IZTO, IAZO, IGZO, IGTO, AZO, ATO, IrO, RuO, RuO/ITO, Ni,Ag, Ni/IrO/Au, and Ni/IrO/Au/ITO. For example, in the embodiment, theohmic contact layer 150 may be made of ITO.

The embodiment shows the case where the ohmic contact layer 150 contactsthe lower and side surfaces of the current blocking layer 145 but theohmic contact layer 150 may be disposed to be spaced from the currentblocking layer 145 or contact only the side surface of the currentblocking layer 145.

The current blocking layer (CBL) 145 may be formed between the ohmiccontact layer 150 and the second conductive type semiconductor layer130. The upper surface of the current blocking layer 145 contacts thesecond conductive type semiconductor layer 130 and the lower and sidesurfaces of the current blocking layer 145 contact the ohmic contactlayer 150.

The current blocking layer 145 may overlap with the electrode 115 in avertical direction. Thereby, a phenomenon that current is concentratedto a shortest distance between the electrode 115 and the conductivesupporting substrate 175 is relieved, thereby making it possible toimprove the light emitting efficiency of the light emitting device 100.The current blocking layer 145 may be selectively formed and may beomitted according to the design of the light emitting device 100.

The current blocking layer 145 is made of a material having electricconductivity lower than the ohmic contact layer 150 and a material thatforms a schottky contact with the second conductive type semiconductorlayer 130, or an electric insulating material. For example, the currentblocking layer 145 may be made of at least one of ZnO, SiO₂,SiO_(x)N_(y), Si₃N₄, Al₂O₃, TiO_(x), Ti, Al, and Cr.

The protective layer 140 may be formed at a peripheral region of theupper surface of the adhesion layer 155. In other words, the protectivelayer 140 may be formed at the peripheral region between the lightemitting structure layer 135 and the adhesion layer 155 and may be theconductive protective layer made of a material having conductivity or anon-conductive protective layer made of a material havingnon-conductivity. The protective layer 140 may be selectively formed andmay be omitted according to the structure of the light emitting device100.

The conductive protective layer is formed of a transparent conductiveoxide film or may include at least one of Ti, Ni, Pt, Pd, Rh, Ir, and W.When the conductive protective layer is subject to an isolation etchingin order to separate the light emitting structure layer 135 into a unitchip in a chip separating process, fragments are generated in theadhesion layer 155 and are attached between the second conductive typesemiconductor layer 130 and the active layer 120 or between the activelayer 120 and the first conductive type semiconductor layer 110, therebypreventing the occurrence of electrical short. Therefore, the conductiveprotective layer is made of a material that prevents the conductiveprotective layer from being broken or the fragments from being generatedwhen the isolation etching is performed. Since the conductive protectivelayer has the electric conductivity, current may be injected to thelight emitting structure layer 135 through the conductive protectivelayer. Therefore, light can be effectively generated even in the activelayer 120 that is disposed on the conductive protective layer disposedat a peripheral region of the light emitting structure layer 135 and thelight efficiency of the light emitting device can be improved. Inaddition, the conductive protective layer prevents the increase in theoperating voltage by the current blocking layer 145, thereby making itpossible to lower the operating voltage of the light emitting device.The conductive protective layer may be made of the same material as theohmic contact layer 150.

The non-conductive protective layer may be made of a material havingsubstantially electric insulating property due to very low electricconductivity. The non-conductive protective layer may be made of anelectric insulating material. For example, the non-conductivityprotective layer may be made of ZnO or SiO₂. The non-conductiveprotective layer increases the distance between the adhesion layer 155and the active layer 120. Therefore, the possibility of causing theelectrical short between the adhesion layer 155 and the active layer 120can be reduced. When the non-conductive protective layer is subject toan isolation etching in order to separate the light emitting structurelayer 135 into a unit chip in a chip separating process, the fragmentsare generated in the adhesion layer 155 and are attached between thesecond conductive type semiconductor layer 130 and the active layer 120or between the active layer 120 and the first conductive typesemiconductor layer 110, thereby preventing the occurrence of electricalshort. The non-conductive protective layer is made of a material thatprevents the non-conductive protective layer from breaking or preventsthe occurrence of the fragments during the etching or a material havingthe electric insulating property that prevents the electrical short eventhough a very small portion of the non-conductive protective layer isbroken a small amount of fragments occur.

A portion of the protective layer 140 overlaps with the light emittingstructure layer 135 in a vertical direction.

The light emitting structure layer 135 may be formed on the ohmiccontact layer 150 and the protective layer 140.

An inclined surface may be formed on the side surface of the lightemitting structure layer 135 during the isolation etching process thatseparates the light emitting structure layer 135 into a plurality ofunit chips.

A portion of the upper surface of the protective layer 140 may beexposed by the isolation etching. Therefore, a portion of the protectivelayer 140 overlaps with the light emitting structure layer 135 in avertical direction and the remaining region thereof does not overlapwith the light emitting structure layer 135 in a vertical direction.

The light emitting structure layer 135 may include a compoundsemiconductor layer of a plurality of elements of III group to V groupand may include, for example, the first conductive type semiconductorlayer 110, the active layer 120 under the first conductive typesemiconductor layer 110, and the second conductive type semiconductorlayer 130 under the active layer 120.

The first conductive type semiconductor layer 110 may be selectivelymade of compound semiconductors of elements of III group to V groupdoped with a first conductive type dopant, for example, GaN, AlN, AlGaN,InGaN, InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, AlGaInP, etc. Whenthe first conductive type semiconductor layer 110 is an N typesemiconductor layer, the first conductive dopant includes an N typedopant such as Si, Ge, Sn, Se, Te, etc. The first conductive typesemiconductor layer 110 may be formed of a single layer or a multi-layerbut is not limited thereto.

The active layer 120 is formed under the first conductive typesemiconductor layer 110 and may include a single quantum well structure,a multi-quantum structure (MQW), a quantum dot structure, and a quantumwire structure. The active layer 120 may be formed of a well layer and abarrier layer using a compound semiconductor material of III group to Vgroup elements, for example, an InGaN well layer/GaN barrier layer or anInGaN well layer/AlGaN barrier layer.

A clad layer may be formed between the active layer 120 and the firstconductive semiconductor layer 110 or between the active layer 120 andthe second conductive type semiconductor layer 130 and the clad layermay be made of an AlGaN-based semiconductor.

The second conductive type semiconductor layer 130 is formed under theactive layer 120 and may be selectively made of compound semiconductorsof elements of III group to V group doped with a second conductive typedopant, for example, GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN,AlGaAs, GaP, GaAs, GaAsP, AlGaInP, etc. When the second conductive typesemiconductor layer 130 is a P type semiconductor layer, the secondconductive dopant includes a P type dopant such as Mg, Zn, etc. Thesecond conductive type semiconductor layer 130 may be formed of a singlelayer or a multi-layer but is not limited thereto.

Meanwhile, the light emitting structure layer 135 may further include anN-type semiconductor layer under the second conductive typesemiconductor layer 130. For example, the light emitting structure layer135 may include at least one of an N-P junction structure, a P-Njunction structure, an N-P-N junction structure, and a P-N-P junctionstructure.

The electrode 115 is formed on the light emitting structure layer 135.The electrode 115 may include a pad portion where a wire bonding isperformed and a finger portion that is extended from the pad portion.The finger portion may be branched in a predetermined pattern shape andmay be formed in various shapes.

The upper surface of the first conductive type semiconductor layer 110may be formed with a roughness pattern 112 for the light extractionefficiency. Therefore, a roughness pattern may be formed even on theupper surface of the electrode 115 but is not limited thereto.

The passivation layer 180 may be formed on at least side surface of thelight emitting structure layer 135. In addition, the passivation layer180 may be formed on the upper surface of the first conductive typesemiconductor layer 110 and the upper surface of the protective layer140 but is not limited thereto.

The passivation layer 180 may be formed to electrically protect thelight emitting structure layer 135.

Hereinafter, a method for manufacturing a light emitting deviceaccording to the embodiment will be described in detail. However, therepeated description of the above description will be omitted orschematically omitted.

FIGS. 2 to 11 are diagrams for explaining a method for manufacturing alight emitting device according to an embodiment.

Referring to FIG. 2, the light emitting structure layer 135 is formed ona growth substrate 101. The growth substrate 101 may be made of at leastone of, for example, sapphire (Al₂O₃), SiC, GaAs, GaN, ZnO, Si, GaP,InP, and Ge but is not limited thereto.

The light emitting structure layer 135 may be formed by growing thefirst conductive type semiconductor layer 110, the active layer 120, andthe second conductive type semiconductor layer 130 on the growthsubstrate 101.

The light emitting structure layer 135 may be formed, for example, usinga MOCVD (Metal Organic Chemical Vapor Deposition) method, a CVD(Chemical Vapor Deposition) method, a PECVD (Plasma-Enhanced ChemicalVapor Deposition) method, an MBE (Molecular Beam Epitaxy) method, anHVPE (Hydride Vapor Phase Epitaxy) method, etc., but is not limitedthereto.

Meanwhile, a buffer layer (not shown) and/or an undoped nitride layer(not shown) may be formed to relieve lattice mismatch due to a latticeconstant difference between the light emitting structure layer 135 andthe growth substrate 101.

Referring to FIG. 3, the protective layer 140 is partially formedcorresponding to a unit chip region on the light emitting structurelayer 135.

The protective layer 140 may be formed at a circumference of the unitchip area using a mask pattern. The protective layer 140 may be formedusing various deposition methods such as a sputtering method.

Referring to FIG. 4, the current blocking layer 145 may be formed on thesecond conductive type semiconductor layer 130. The current blockinglayer 145 may be formed using a mask pattern.

The protective layer 140 and the current blocking layer 145 may be madeof the same material. In this case, the protective layer 140 and thecurrent blocking layer 145 may be simultaneously formed in one processwithout being formed in a separate process. For example, after an SiO₂layer is formed on the second conductive type semiconductor layer 130,the protective layer 140 and the current blocking layer 145 may besimultaneously formed using the mask pattern.

Referring to FIG. 5, the ohmic contact layer 150 is formed on the secondconductive type semiconductor layer 130 and the current blocking layer145. In addition, the ohmic contact layer 150 may be formed only on thesecond conductive semiconductor layer 130.

Referring to FIG. 6, the adhesion layer 155 and the reflecting layer 160are formed on the ohmic contact layer 150.

The ohmic contact layer 150, the adhesion layer 155, and the reflectinglayer 160 may be formed of any one of, for example, an E-beam method, asputtering method, and a plasma enhanced chemical vapor deposition(PECVD) method.

Referring to FIGS. 7 and 8, the conductive supporting substrate 175 isprepared.

The structure as shown in FIG. 6 and the conductive supporting substrate175 are bonded to each to via the bonding layer 170.

The conductive supporting substrate 175 is attached by the bonding layer170. Although the embodiment shows the case where the conductivesupporting substrate 175 is coupled in the bonding manner through thebonding layer 170, the conductive supporting substrate 175 may be formedin the plating manner or the deposition manner. In this case, instead ofthe bonding layer 170, the seed layer can be used.

Referring to FIG. 9, the light emitting structure layer 135 is removedfrom the growth substrate 101. FIG. 9 shows the case where the structureshown in FIG. 8 is turned over.

The growth substrate 101 may be removed by a laser lift off method or achemical lift off method.

Referring to FIG. 10, the light emitting structure layer 135 is subjectto the isolation etching along the unit chip region, such that theplurality of light emitting structure layer 135 is separated. Forexample, the isolation etching may be performed by a dry etching methodsuch as an inductively coupled plasma (ICP) method.

Referring to FIG. 11, the passivation layer 180 is formed on theprotective layer 140 and the light emitting structure layer 135, therebyselectively removing the passivation layer 180 so that the upper surfaceof the first conductive type semiconductor layer 110 is exposed.

The roughness pattern 112 is formed on the upper surface of the firstconductive type semiconductor layer 110 to improve the light extractingefficiency and the electrode 115 is formed on the roughness pattern 112.The roughness pattern 112 may be formed by a wet etching process or adry etching process.

When the structure is separated into the unit chip region through thechip separating process, the plurality of light emitting devices may bemanufactured.

The chip separating process may include, for example, a braking processthat separates a chip by applying a physical force using a blade, alaser scribing process that separates the chip by irradiating laser tothe chip boundary, an etching process that includes the wet or dry etch,etc. but is not limited thereto.

FIG. 12 is a cross-sectional view of a light emitting apparatusincluding a light emitting device according to an embodiment.

Referring to FIG. 12, the light emitting apparatus according to theembodiment includes a body 30, a first electrode 31 and a secondelectrode 32 that are disposed on the body 30, a light emitting device100 that is disposed on the body 30 and is electrically connected to thefirst electrode 31 and the second electrode 32, and a sealing layer 40that surrounds the light emitting device 100.

The body 30 may made including a silicon material, a synthetic resinmaterial, or a metal material and may have a cavity whose side surfaceis inclined.

The first electrode 31 and the second electrode 32 are separated fromeach other and power is supplied to the light emitting device 100. Inaddition, the first electrode 31 and the second electrode 32 can reflectlight generated from the light emitting device 100 to increase lightefficiency and emit heat generated from the light emitting device 100 tothe outside.

The light emitting device 100 may be installed on the body 30 orinstalled on the first electrode 31 or the second electrode 32.

The light emitting device 100 may be electrically connected to the firstelectrode 31 and the second electrode 32 by any one of the wire manner,a flip chip manner, and a die bonding manner. The embodiment shows thecase where the light emitting device 100 is electrically connected tothe first electrode 31 through the wire 50 and is electrically connectedthereto by directly contacting the second electrode 32.

The sealing layer 40 can surround the light emitting device 100 toprotect the light emitting device 100. In addition, the sealing layer 40can include a phosphor to change a wavelength of light emitted from thelight emitting device 100.

The embodiments can provide the light emitting device having a newstructure, the method for manufacturing a light emitting device, and thelight emitting apparatus.

The embodiments can provide the light emitting device with improvedlight extracting efficiency, the method for manufacturing a lightemitting device, and the light emitting apparatus.

The embodiments can provide the light emitting device that can preventmaterials used as the reflecting layer from diffusing to the lightemitting structure layer, the method for manufacturing a light emittingdevice, and the light emitting apparatus.

Any reference in this specification to “one Embodiment,” “anembodiment,” “example embodiment,” etc., means that a particularfeature, structure, or characteristic described in connection with theembodiment is included in at least one embodiment of the invention. Theappearances of such phrases in various places in the specification arenot necessarily all referring to the same embodiment. Further, when aparticular feature, structure, or characteristic is described inconnection with any embodiment, it is submitted that it is within thepurview of one skilled in the art to effect such feature, structure, orcharacteristic in connection with other ones of the embodiments.

Although embodiments have been described with reference to a number ofillustrative embodiments thereof, it should be understood that numerousother modifications and embodiments can be devised by those skilled inthe art that will fall within the spirit and scope of the principles ofthis disclosure. More particularly, various variations and modificationsare possible in the component parts and/or arrangements of the subjectcombination arrangement within the scope of the disclosure, the drawingsand the appended claims. In addition to variations and modifications inthe component parts and/or arrangements, alternative uses will also beapparent to those skilled in the art.

1. A method for fabricating a light emitting device, the methodcomprising: forming a light emitting structure layer; forming aprotective layer on a first portion of the light emitting structurelayer; forming an ohmic contact layer on a second portion of the lightemitting structure layer; forming an adhesion layer including anoxide-based material on the ohmic contact layer, wherein a portion ofthe adhesion layer contacts a portion of the protective layer; andforming a reflecting layer on the adhesion layer.
 2. The methodaccording to claim 1, wherein the adhesion layer includes AZO (Al—ZnO)or IZO (In—ZnO).
 3. The method according to claim 2, wherein the AZO orIZO has a content of ZO (Zinc-Oxide) of about 50% to about 80%.
 4. Themethod according to claim 1, further comprising, forming a conductivesupporting substrate on the reflective layer; performing an isolationetching to the light emitting structure layer along a boundary of a unitchip region; and forming an electrode on the light emitting structurelayer.
 5. The method according to claim 4, further comprising forming aseed layer for plating between the conductive supporting substrate andthe reflecting layer.
 6. The method according to claim 1, wherein alateral surface of the ohmic contact layer is surrounded by theprotective layer.
 7. The method according to claim 1, wherein theprotective layer includes at least one of SiO₂, Si₃N₄, ITO, TiO₂, AZO,and IZO.
 8. The method according to claim 1, wherein the reflectinglayer includes at least one of Ag, Al, Ag—Pd—Cu, and Ag—Cu.
 9. Themethod according to claim 1, wherein the protective layer is formed at aperipheral region of the ohmic contact layer between the light emittingstructure layer and the adhesion layer.
 10. The method according toclaim 1, wherein the protective layer is partially overlapped with thelight emitting structure layer.
 11. The method according to claim 1,wherein the protective layer includes at least one of a transparentconductive oxide film, Ti, Ni, Pt, Pd, Rh, Ir, and W.
 12. The methodaccording to claim 1, further comprising forming a current blockinglayer between the ohmic contact layer and the light emitting structurelayer.
 13. The method according to claim 1, wherein the reflecting layerincludes at least one of Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Cu, Au,and Hf.
 14. The method according to claim 1, wherein the ohmic contactlayer includes at least one of ITO, IZO, IZTO, IAZO, IGZO, IGTO, AZO,ATO, IrO, RuO, RuO/ITO, Ni, Ag, Ni/IrO/Au, and Ni/IrO/Au/ITO.
 15. Themethod according to claim 1, wherein the light emitting structure layerincludes a first conductive type semiconductor layer, a secondconductive type semiconductor layer, and an active layer between thefirst conductive type semiconductor layer and the second conductive typesemiconductor layer.
 16. The method according to claim 1, wherein theadhesion layer is formed to contact the ohmic contact layer and thereflecting layer.
 17. A method for fabricating a light emitting device,the method comprising: forming a light emitting structure layer;partially forming a conductive protective layer corresponding to a unitchip region on the light emitting structure layer; forming an ohmiccontact layer on the light emitting structure layer; forming an adhesionlayer including an oxide-based material on the ohmic contact layer andthe conductive protective layer, wherein a portion of the adhesion layercontacts the conductive protective layer; forming a reflecting layer onthe adhesion layer; forming a conductive supporting substrate on thereflecting layer; performing an isolation etching to the light emittingstructure layer along the unit chip region; and forming an electrode onthe light emitting structure layer.
 18. The method according to claim17, wherein the adhesion layer includes AZO (Al—ZnO) or IZO (In—ZnO).19. The method according to claim 18, wherein the AZO or IZO has acontent of ZO (Zinc-Oxide) of about 50% to about 80%.
 20. The methodaccording to claim 17, further comprising forming a current blockinglayer between the ohmic contact layer and the light emitting structurelayer.